- Quantum electron transport in semiconductor
- Various electronic devices using two-dimensional materials
- Quantum electron transport using two-dimensional material
- Electronic properties in low-dimensional semiconductors
- Quantum Computer
- Bose-Einstein condensation in 2D materials
Education
Ph.D. Semiconductor Physics University of Cambridge, UK 1993~1998
Thesis: “Magnetotransport in Low Dimensional Semiconductor Structures”
M.Ed. Physics Hanyang University, Korea 1990~1992
B.S. Physics Hanyang University, Korea 1981~1985
Experience
2002 - present, Professor, School of Electronic and Electrical Engineering, College of Information and Communication Engineering & Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University, Korea
1999 - 2002, Senior Researcher, Electronics and Telecommunications Research Institute (ETRI), Korea
Journal Articles
(2024)
Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple-Gated Point Contact Device.
ADVANCED MATERIALS TECHNOLOGIES.
(2023)
Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering.
ACS APPLIED MATERIALS & INTERFACES.
15,
29
(2023)
Enhanced contact properties of MoTe2-FET via laser-induced heavy doping.
JAPANESE JOURNAL OF APPLIED PHYSICS.
62,
SC
(2023)
Quantum Hall plateau-plateau transition revisited.
CHINESE JOURNAL OF PHYSICS.
82,
(2023)
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moire-gapped graphene.
NATURE COMMUNICATIONS.
14,
1
(2023)
Improved electrical properties of encapsulated MoTe2 with 1T' edge contacts via laser irradiation.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
153,
(2020)
Study of oxygen plasma induced modulation of photoconductivity in MoS2 field effect transistor.
SUPERLATTICES AND MICROSTRUCTURES.
142,
(2020)
Few-layer PdSe2 -based field-effect transistor for photodetector applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
115,
(2020)
Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors.
ACS APPLIED MATERIALS & INTERFACES.
12,
4
(2019)
Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets.
CARBON.
154,
Patent/Intellectual Property
나노소자 및 그의 제조 방법(NANODEVICES AND PREPARING METHOD OF THE SAME).
10-1090486-0000.
20111130.
KOREA, REPUBLIC OF
Conference Paper
(2022)
MoTe2-based Schottky barrier diode enabled by contact engineering.
한국물리학회 가을.
KOREA, REPUBLIC OF
(2022)
Random telegraph signal for single spin tunneling in MoS2.
the 20th International Symposium on the Physics of Semiconductors and Applications.
KOREA, REPUBLIC OF
(2022)
Single‐defect‐induced random telegraph signals in a molybdenum disulfide vertical transistor.
International Conference on the Physics of Semiconductors.
AUSTRALIA
(2021)
Improved electrical properties of MoTe2 with indium edge contacts by laser irradiation.
19th International Nanotechnology symposium.
KOREA, REPUBLIC OF
(2019)
Schottky Barrier Height Modulation by ZnO Interlayer for High-Performance MoS2 Field-Effect Transistors.
The 5th International Conference on Advanced Electromaterials.
KOREA, REPUBLIC OF
(2019)
Basic quantum physics in two, one, and zero-dimensional semiconductor structures.
International Nathiagali Summer College on Physics and Contemporary Needs.
PAKISTAN
(2018)
Low Energy Oxygen Plasma Induced Modulation in Optoelectrical Properties of Atomically Thin Molybdenum
Disulfide Field Effect Transistors.
34th International Conference on the Physics of Semiconductors.
FRANCE
(2018)
Transport Properties of Dual Channel Transistor Based on Molybdenum Disulfide/Tungsten Diselenide
Heterostructure.
34th International Conference on the Physics of Semiconductors.
FRANCE
(2018)
Self-gating diode based on MoS2/h-BN heterostructure.
20th International Conference on Superlattices, Nanostructures and Nanodevices - ICSNN2018.
SPAIN
(2017)
E-beam lithography와 O2 플라즈마 식각 공정을 이용한
2차원 물질 나노 갭 형성.
한국물리학회.
KOREA, REPUBLIC OF
(2017)
산소 플라즈마 건식 식각을 이용한 선폭 감소 현상 연구.
한국물리학회.
KOREA, REPUBLIC OF
(2017)
Observation of Joule Heating Induced Negative Differential Resistance in Mesoscopic Graphene Oxide.
International Conference on Electronic Properties of Two Dimensional Systems.
UNITED STATES
(2017)
Junction-less Diode Enabled by Self-Bias Effect of Ion Gel in Single Layer MoS2 Device.
12th International Conference on the Structure of Surfaces.
UNITED STATES
(2016)
Oxygen Plasma Treatment Induced Improvement in the Device Properties of Hafnium Diselenide FETs.
International Conference on Chemical and Material Engineering.
KOREA, REPUBLIC OF
(2016)
Ambipolar field-effect transistor with atomically thin dual-channel of WSe2/MoS2 heterostructure.
33rd International COference on the Physics of Semiconductor.
CHINA
(2016)
Improved persistent photoconductivity in few-layer MoS2 FETs by graphene oxide functionalization.
33rd lnternational Conference on the Physics of Semiconductors (lCPS2016).
CHINA
(2016)
Conductance Control in VO2 Nanowires by Surface Doping with Gold Nanoparticles.
The 9th International Conference on Quantum Dots.
KOREA, REPUBLIC OF
(2015)
Ambipolar field-effect transistor with atomically thin dual-channel of WSe2/MoS2 heterostructure.
다산 컨퍼런스.
KOREA, REPUBLIC OF
(2015)
전기영동법을 이용한 그래핀에 부착되는 Au 나노입자의 위치제어 및 전기적 특성 연구.
2015 한국물리학회 가을 학술논문 발표회.
KOREA, REPUBLIC OF
(2015)
Electronic Transport Properties of HfSe2 Field Effect Transistors.
The International Union of Pure and Applied Physics.
JAPAN
